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2025-05-29 19:19:47 +02:00
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32
Komponentenauslegung/FETs/Calculate_FET_Charac.m Normal file
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close all
%https://www.infineon.com/dgdl/Infineon-IPA95R130PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81ae03fc0181f72507e62e68
fs = 100e3; %Switching frequency [Hz]
n = 12;
V_in_max = 600; %Maximum input voltage [V]
Ip_rms = 3; %Primary RMS Current [A]
R_DS = 0.13; %Drain-Source-Resistance [Ohm]
C_oss = 53e-12; %Output Capacitance [F]
V_DS_meas = 400; %Drain-Source-Voltage during measurement of Coss [V]
C_oss_avg = C_oss*sqrt(V_DS_meas/V_in_max); %Average output capacitance [F]
Q_g = 141e-9; %Total gate charge [nC]
V_GS = 10; %Applied Gate Voltage [V]
%Calculate losses
P_cond = power(Ip_rms,2)*R_DS; %Conduction Losses [W]
P_cap = Q_g*V_GS*fs; %Capacitive switching losses [W]
P_loss = 4*(P_cond+P_cap); %Losses of the full bridge [W]
%Calculate Shim Inductor
Ipp = 4.4; %Peak to Peak primary Current at 300W and 600V [A]
dI_L = 5.1; %Output Inductor ripple [A]
Ls_min = 2*C_oss_avg*power(V_in_max/((Ipp-dI_L/n)/2),2); %Necessary leakage inductance [H]

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Komponentenauslegung/FETs/Datasheets/Infineon-IPA95R130PFD7-DataSheet-v02_01-EN.pdf Normal file
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Komponentenauslegung/FETs/Datasheets/vx60170pw.pdf Normal file
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Komponentenauslegung/FETs/Diode_forward.csv Normal file
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x, y
0.3805770584095707, 0.11001471479027736
0.44897959183673464, 0.6058755398375443
0.5604503870513723, 2.6599315841134215
0.701688951442646, 7.924351487246231
0.8384940182969739, 23.607880318602913
0.9271639690358902, 41.60743893429978
1 x y
2 0.3805770584095707 0.11001471479027736
3 0.44897959183673464 0.6058755398375443
4 0.5604503870513723 2.6599315841134215
5 0.701688951442646 7.924351487246231
6 0.8384940182969739 23.607880318602913
7 0.9271639690358902 41.60743893429978

34
Komponentenauslegung/FETs/Rectifier_FETs.m Normal file
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%% Skript zur Berechnung der Verluste der Gleichrichter-FETs
clear all
close all
fs = 100e3; %Switching frequency [Hz]
n = 12; %Turns ratio
V_DS_max = 600/n *2; %Maximum Drain-Source-Voltage [V]
Is_rms = 1000/24; %Secondary RMS Current [A]
R_DS = 0.13; %Drain-Source-Resistance [Ohm]
C_oss = 53e-12; %Output Capacitance [F]
V_DS_meas = 400; %Drain-Source-Voltage during measurement of Coss [V]
C_oss_avg = C_oss*sqrt(V_DS_meas/V_DS_max); %Average output capacitance [F]
t_r = 30e-9; %Rise time [s]
t_f = 30e-9; %Fall time [s]
V_GS = 10; %Gate-Source-Voltage [V]
Q_g = 100e-9; %Gate Charge Miller Plateau[C]
%Calculate losses
P_cond = power(Is_rms,2)*R_DS; %Conduction Losses [W]
P_cap = 2*(Q_g*V_GS*fs/2 + V_DS_max*V_DS_max*C_oss_avg*fs/2); %Capacitive switching losses [W]
P_sw = 1/2 * Is_rms * V_DS_max * fs * (t_r+t_f); %Switching loss [W]
P_loss = 2*(P_cond+P_cap+P_sw); %Losses of the rectifier [W]

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Komponentenauslegung/FETs/Spice/DPT_Switching_Energies.asc Normal file
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Version 4
SHEET 1 3680 1664
WIRE -1456 -2016 -1456 -2080
WIRE -1312 -2016 -1312 -2080
WIRE -1456 -1872 -1456 -1936
WIRE -1312 -1872 -1312 -1936
WIRE -1104 -1824 -1136 -1824
WIRE -912 -1824 -1024 -1824
WIRE -784 -1824 -912 -1824
WIRE -544 -1824 -784 -1824
WIRE -912 -1792 -912 -1824
WIRE -784 -1792 -784 -1824
WIRE -1136 -1760 -1136 -1824
WIRE -1136 -1632 -1136 -1680
WIRE -912 -1632 -912 -1728
WIRE -912 -1632 -1136 -1632
WIRE -784 -1632 -784 -1728
WIRE -784 -1632 -912 -1632
WIRE -1136 -1600 -1136 -1632
WIRE -544 -1520 -544 -1824
WIRE -128 -1520 -544 -1520
WIRE -544 -1360 -544 -1520
WIRE -544 -1360 -560 -1360
WIRE -560 -1344 -560 -1360
WIRE -128 -1216 -128 -1520
WIRE -560 -960 -560 -1280
WIRE -544 -960 -560 -960
WIRE -128 -960 -128 -1136
WIRE -128 -960 -544 -960
WIRE -144 -592 -288 -592
WIRE -544 -576 -544 -960
WIRE -496 -576 -544 -576
WIRE -256 -560 -288 -560
WIRE -240 -560 -256 -560
WIRE -496 -544 -768 -544
WIRE -256 -528 -256 -560
WIRE -256 -528 -288 -528
WIRE -768 -512 -768 -544
WIRE -144 -432 -144 -592
WIRE -144 -432 -560 -432
WIRE -768 -416 -768 -432
WIRE -560 -336 -560 -432
WIRE -560 -336 -768 -336
WIRE -560 -16 -560 -336
FLAG -1136 -1600 0
FLAG -1312 -1872 0
FLAG -1312 -2080 Tc
FLAG -1456 -1872 0
FLAG -1456 -2080 Tj
FLAG -544 -960 Phase
FLAG -560 -16 0
FLAG -240 -560 Tj
SYMBOL voltage -1136 -1776 R0
WINDOW 123 0 0 Left 0
SYMATTR SpiceLine Rser={Rser}
SYMATTR InstName V4
SYMATTR Value {U_DC}
SYMBOL voltage -1312 -2032 R0
WINDOW 123 0 0 Left 0
WINDOW 39 0 0 Left 0
SYMATTR InstName V5
SYMATTR Value 25
SYMBOL voltage -1456 -2032 R0
WINDOW 123 0 0 Left 0
WINDOW 39 0 0 Left 0
SYMATTR InstName V6
SYMATTR Value 25
SYMBOL ind -144 -1232 R0
SYMATTR InstName L1
SYMATTR Value {L_load}
SYMATTR SpiceLine Rser={R_load}
SYMBOL voltage -768 -432 R0
WINDOW 123 0 0 Left 0
WINDOW 39 0 0 Left 0
WINDOW 3 24 96 Invisible 2
SYMATTR Value PULSE({V_GS_neg} {V_GS_pos} 100n 5n 5n {T_on} {T_on+T_off})
SYMATTR InstName PWM_LS
SYMBOL cap -800 -1792 R0
SYMATTR InstName C1
SYMATTR Value 100<30>
SYMATTR SpiceLine Rser={ESR} Lser={ESL}
SYMBOL cap -928 -1792 R0
SYMATTR InstName C2
SYMATTR Value 100<30>
SYMATTR SpiceLine Rser={ESR} Lser={ESL}
SYMBOL ind -1120 -1808 R270
WINDOW 0 32 56 VTop 2
WINDOW 3 5 56 VBottom 2
SYMATTR InstName L3
SYMATTR Value 5<>
SYMBOL res -752 -416 R180
WINDOW 0 36 76 Left 2
WINDOW 3 36 40 Left 2
SYMATTR InstName R1
SYMATTR Value {R_G_on}
SYMBOL IPA95R130PFD7_L3 -400 -560 R0
SYMATTR InstName U3
SYMBOL diode -544 -1280 R180
WINDOW 0 24 64 Left 2
WINDOW 3 24 0 Left 2
SYMATTR InstName D1
TEXT 560 -2056 Left 2 !.tran 0 {T_sim} 0 5E-10
TEXT -104 -2224 Left 2 !.param L_load=110u\n.param R_load= 11m
TEXT -104 -2120 Left 2 !.param U_DC =600\n.param Rser = 100m\n.param I_DS = 5
TEXT 568 -1904 Left 2 !.options ABSTOL=100p\n.options CHGTOL=1p\n.options ITL1=150\n.options ITL2=150\n.options ITL4=500\n.options RELTOL=0.0001
TEXT 240 -1296 Left 2 !.meas TRAN E_off INTEG V(Phase)*Ix(U3:drain) FROM T_load TO T_load+ T_off/4\n.meas TRAN E_on INTEG V(Phase)*Ix(U3:drain) FROM T_load+T_off TO T_load+5*T_off/4\n.meas TRAN P_cond_on1 FIND Ix(U3:drain)*V(Phase) AT T_load+5*T_off/4\n.meas TRAN P_cond_on_2 FIND Ix(U3:drain)*V(Phase) AT T_load+5*T_off/4 + 50n\n.meas P_cond PARAM (P_cond_on1+P_cond_on_2)/2\n.meas E_cond PARAM {P_cond *(T_Off/4)}\n.meas E_off_uJ PARAM {E_off*1000000}\n.meas E_on_uJ PARAM {(E_on - E_cond)*1000000}
TEXT -1128 -1912 Left 2 ;DC Quelle & Zwischenkreis
TEXT -1480 -2144 Left 2 ;Temperatur der MOSFETs
TEXT -104 -2320 Left 3 ;Parametereingabe
TEXT -104 -2256 Left 2 ;Lastinduktivit<69>t
TEXT 560 -2264 Left 2 !.param tau_load=L_load/R_load\n.param I_max=U_DC/R_load\n.param T_load=-tau_load*ln(1-I_DS/I_max)\n.param T_on=T_load\n.param T_off = 1u\n.param T_sim=2*(T_on+T_off)
TEXT -104 -2152 Left 2 ;DC-Spannung und Drainstrom
TEXT -104 -2016 Left 2 ;DC-Link Kondensatoren
TEXT -104 -1984 Left 2 !.param ESR = 1m\n.param ESL = 1n
TEXT 552 -2312 Left 3 ;Berechnung der Schaltzeitpunkte
TEXT 232 -1344 Left 3 ;Optional Berechnung Schaltenergien (default nicht aktiviert)
TEXT 568 -1944 Left 3 ;Simulationsparameter (nicht <20>ndern)
TEXT -104 -1904 Left 2 ;Powerloop Induktivit<69>t
TEXT -104 -1872 Left 2 !.param L_power=10n
TEXT 232 -1576 Left 3 ;Import der Modelle
TEXT -104 -1824 Left 2 ;Gatedrive Parameter
TEXT -104 -1784 Left 2 !.param R_G_on =5.3\n.param R_G_off = 2.87\n.param V_GS_pos = 13\n.param V_GS_neg = 0
TEXT -1488 -2312 Left 6 ;Modell zur Simuation des DPTs
TEXT 264 -1440 Left 2 !.inc Lib\\IFX-SimulationModel_CoolMOS_PFD7_950V_Spice-web.lib

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Komponentenauslegung/FETs/Spice/DPT_Switching_Energies.log Normal file
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Questionable use of curly braces in ".meas e_cond param {p_cond*(t_off/4)}"
Error: undefined symbol in: "[p_cond]*(t_off/4)"
Questionable use of curly braces in ".meas e_off_uj param {e_off*1000000}"
Error: undefined symbol in: "[e_off]*1000000"
Questionable use of curly braces in ".meas e_on_uj param {(e_on-e_cond)*1000000}"
Error: undefined symbol in: "([e_on]-e_cond)*1000000"
LTspice 24.0.12 for Windows
Circuit: * C:\Users\Vincents Laptop\Documents\TU Berlin\Fasttube\Electronics\DCDC\Konzept\PSFB\FETs\Spice\DPT_Switching_Energies.asc
Start Time: Tue May 27 20:54:41 2025
solver = Normal
Maximum thread count: 16
tnom = 27
temp = 27
method = modified trap
abstol = 1e-10
reltol = 0.0001
chgtol = 1e-12
c1: Increased Cpar to 1e-10
c2: Increased Cpar to 1e-10
WARNING: Less than two connections to node tc. This node is used by v5.
Direct Newton iteration for .op point succeeded.
Changing Tseed to 5e-14
Changing Tseed to 5e-16
Heightened Def Con from 7.32422e-16 to 1e-09
Heightened Def Con from 1e-07 to 1.045e-07
Heightened Def Con from 2.01671e-06 to 2.02176e-06
e_off: INTEG(v(phase)*ix(u3:drain))=1.37158e-06 FROM 9.16709e-07 TO 1.16671e-06
e_on: INTEG(v(phase)*ix(u3:drain))=1.64926e-05 FROM 1.91671e-06 TO 2.16671e-06
p_cond_on1: ix(u3:drain)*v(phase)=4.38208 at 2.16671e-06
p_cond_on_2: ix(u3:drain)*v(phase)=4.77517 at 2.21671e-06
p_cond: (p_cond_on1+p_cond_on_2)/2=4.57862
e_cond: (p_cond*(t_off/4))=1.14466e-06
e_off_uj: (e_off*1000000)=1.37158
e_on_uj: ((e_on-e_cond)*1000000)=15.348
Total elapsed time: 1.335 seconds.

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Komponentenauslegung/FETs/Spice/DPT_Switching_Energies.op.raw Normal file
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Komponentenauslegung/FETs/Spice/Lib/IPW95R130PFD7_L1_sym.asy Normal file
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Version 4
SymbolType BLOCK
RECTANGLE Normal -96 -40 112 40
WINDOW 0 8 -40 Bottom 2
WINDOW 3 8 40 Top 2
WINDOW 39 8 64 Top 2
SYMATTR Prefix X
SYMATTR Value IPW95R130PFD7_L1
SYMATTR ModelFile C:\Users\Vincents Laptop\Documents\TU Berlin\Fasttube\Electronics\DCDC\Konzept\PSFB\FETs\Spice\Lib\IFX-SimulationModel_CoolMOS_PFD7_950V_Spice-web.lib
SYMATTR SpiceLine dVth=0 dRdson=0
PIN -96 0 LEFT 8
PINATTR PinName drain
PINATTR SpiceOrder 1
PIN 112 -16 RIGHT 8
PINATTR PinName gate
PINATTR SpiceOrder 2
PIN 112 16 RIGHT 8
PINATTR PinName source
PINATTR SpiceOrder 3

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Komponentenauslegung/FETs/Spice/Lib/PFD_950V.lib Normal file
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*****************************************************************
* INFINEON Power Transistors *
* Content: SPICE Model Library *
* Device: CoolMOS (Superjunction MOSFET) *
* Model Types: L0 L1 L3 *
* Technology: PFD7 950V *
* Date and time: 28.02.2022 15:02:54 *
* Version: 869-718-870-934-885-945 *
*****************************************************************
* *
* The models for Infineon Power MOSFET are evaluated with *
* SIMetrixTM-SPICE simulator. The Infineon Power MOSFET models *
* are tested, verified and provided in SPICE simulation code. *
* *
* Infineon | Terminals | Usage suggestion *
* Level | | *
* ------------------------------------------------------------- *
* L0 | G, D, S | General electrical simulations/ whole *
* | | application circuits. *
* ------------------------------------------------------------- *
* L1 | G, D, S | Transient, switching losses and *
* | | efficiency analyses. Behavior of *
* | | device over full temperature range. *
* ------------------------------------------------------------- *
* L2 | G, D, S, | Same as L1 but with individual device *
* | Tj, Tcase | temperature. This model is not *
* | | supported because it is covered by *
* | | L3-model. *
* ------------------------------------------------------------- *
* L3 | G, D, S, | Self-heating effects, modeling of heat *
* | Tj, Tcase | flow including thermal models of *
* | | application. *
* *
*****************************************************************
* Detailed Informations: *
* *
* The model files are available on the Infineon web page: *
* http://www.infineon.com *
* Please refer also to the Infineon application note AN 2014-02 *
* "Simulation models for Infineon Power MOSFET" *
* *
* This library contains models of the following INFINEON *
* CoolMOS transistors: *
* *
* PFD7 950V *
* IPW95R060PFD7 IPW95R130PFD7 IPA95R130PFD7 *
* IPB95R130PFD7 IPW95R310PFD7 IPA95R310PFD7 *
* IPB95R310PFD7 IPA95R450PFD7 IPB95R450PFD7 *
* IPD95R450PFD7 *
* *
*****************************************************************
**********************************************************************
************************ L1 TECHNOLOGY MODEL *************************
**********************************************************************
.SUBCKT cool_tech dd g s Tj t1 PARAMS: a=1 dVth=0 dR=0 Inn=1 Unn=1 Rmax=1
+gmin=1 Rs=1 Rdp=1 heat=0
.PARAM fpar42=298
.PARAM fpar1=3.61
.PARAM fpar2=0.004
.PARAM fpar3=-0.0011
.PARAM fpar4=11.8
.PARAM fpar5=2.35
.PARAM fpar6=3.3
.PARAM fpar7=0.393
.PARAM fpar8=10.5
.PARAM fpar9=1.3
.PARAM fpar10=5.68
.PARAM fpar11=1.7413
.PARAM fpar12=50
.PARAM fpar13=0.295
.PARAM fpar14=-23
.PARAM fpar15=1045
.PARAM fpar16=1.045
.PARAM fpar18=0.25
.PARAM fpar19=-30
.PARAM fpar20=0.8e-007
.PARAM fpar21=1.09
.PARAM fpar22=0.25
.PARAM fpar23=1.47e-015
.PARAM fpar24=2.8e-010
.PARAM fpar25=8.546e-011
.PARAM fpar26=5.14e-012
.PARAM fpar27=1.66e-015
.PARAM fpar28=12e-013
.PARAM fpar29=8.334e-012
.PARAM fpar30=4.72e-013
.PARAM fpar31=1e-014
.PARAM fpar32=142
.PARAM fpar33=1.3e-012
.PARAM fpar34=0.5e-012
.PARAM fpar35=1.712e-010
.PARAM fpar36=6.739625e-008
.PARAM fpar37=3.46758e-009
.PARAM fpar38=1.6e-010
.PARAM fpar39=0.3e-010
.PARAM fpar17=0.0
.PARAM fpar40=85.8u
.PARAM fpar41=273
.PARAM dRdi={fpar18/a}
.PARAM Cdio={fpar23*a}
.PARAM Cdg1={fpar24*a+fpar25*SQRT(a)}
.PARAM Cdg2={fpar26*a}
.PARAM CdgV1={fpar27*a}
.PARAM CdgV2={(fpar31*a+fpar28)}
.PARAM Cds0={fpar33*a+fpar34*SQRT(a)}
.PARAM Cds1={a*fpar35+40p*4*SQRT(a)}
.PARAM Cgs0={fpar38*a+fpar39*(SQRT(a))}
.PARAM Vmin=3.01 Vmax=4.21
.PARAM Vth={fpar1+(Vmax-fpar1)*limit(dVth,0,1)-(Vmin-fpar1)*limit(dVth,-1,0)}
.PARAM r0={fpar8*((fpar41/fpar42)**fpar9)*a}
.PARAM r1={(Unn-Inn*Rs-fpar1)*r0}
.PARAM r2={(fpar17*SQRT(0.4)-fpar11)*Inn*r0}
.PARAM Rlim={(r1+2*r2*Rmax-SQRT(r1**2+4*r2))/(2*r2)}
.PARAM dRd={fpar5/a+if(dVth==0,limit(dR,0,1)*max(Rlim-fpar5/a-Rs-Rdp,0),0)}
.PARAM CAP_eedg=-0.556
.PARAM x0={(fpar29-fpar26)/fpar30} x1={fpar29/fpar30} dx={x1-x0}
.FUNC QCdg1(x) {Cdg2*min(x,x1)+CdgV2*max(x-x1,0)+CdgV1/2*max(0, x-fpar32)**2+(Cdg2-CdgV2)*((limit(x,x0,x1)-x0)**3/(dx*dx)*((limit(x,x0,x1)-x0)/(2*dx)-1))}
.PARAM Eds1={-6000} Eds2={-320} Eds3={-200} eeds1={-0.1667} eeds2={-6.25m} eeds3={-0.05}
.PARAM a0={(fpar36-fpar35)/fpar37} a1={fpar36/fpar37} da={a1-a0}
.FUNC QCds1(x) {Cds1*min(x,a1)+Cds1*((limit(x,a0,a1)-a0)**3/(da*da)*((limit(x,a0,a1)-a0)/(2*da)-1))}
E_Edg1 d1 ox VALUE {if(V(d1,g)>0,V(d1,g)-(exp(CAP_eedg*max(V(d1,g),0))-1)/CAP_eedg,0)}
C_Cdg1 ox g {Cdg1}
E_Edg2 d1 ox2 VALUE {V(d1,g)-QCdg1(V(d1,g))/Cdg2}
C_Cdg2 ox2 g {Cdg2}
C_Cds0 d1 s {Cds0}
E_Eds1 d1 edep1 VALUE {if(V(d1,s)>0,V(d1,s)-Eds1*(exp(eeds1*max(V(d1,s),0))-1)-Eds2*(exp(eeds2*max(V(d1,s),0))-1)-Eds3*(exp(eeds3*max(V(d1,s),0))-1),0)}
C_Cds1 edep1 s {Cds0}
E_Eds2 d1 edep2 VALUE {V(d1,s)-QCds1(V(d1,s))/Cds1}
C_Cds2 edep2 s {Cds1}
C_Cgs g s {Cgs0}
.FUNC I0(Uee,p,pp,z1,cc) {if(Uee>pp,(Uee-cc*z1)*z1,p*(pp-p)/cc*exp((Uee-pp)/p))}
.FUNC Ig(Uds,T,p,Uee,cc) {fpar8*(fpar41/T)**fpar9*I0(Uee,p,min(2*p,p+cc*Uds),min(Uds,Uee/(2*cc)),cc)}
.FUNC J(d,g,T,da,s)
+ {a*(s*(Ig(da,T,fpar10*fpar40*T,g-Vth+fpar2*(T-fpar42),fpar11)+1*exp(min(fpar14+(d-fpar15-fpar16*(T-fpar42))/fpar13,25))))}
G_chan d s VALUE={J(V(d,s),V(g,s),fpar41+limit(V(Tj),-200,499),(SQRT(1+4*fpar12*abs(V(d,s)))-1)/2/fpar12,sgn(V(d,s)))}
V_Ichannel d1 d 0
.FUNC Rd0(T) {(fpar7*dRd+(1-fpar7)*dRd*(T/fpar42)**fpar6)}
.FUNC CF(T,Iepi) {(fpar4**2)/max(1,fpar4**2-(Rd0(T)*Iepi)**limit(2+fpar3*(T-fpar42),1.2,3))}
V_Iepi dd d2 0
G_G_Rd d2 d1 VALUE {V(d2,d1)/(Rd0(fpar41+LIMIT(V(t1),-200,999))*CF(fpar41+LIMIT(V(t1),-200,999),abs(I(V_Iepi))))}
Dbody s dio dbody
.model dbody D (BV={fpar15*10}, CJO ={Cdio}, TT={fpar20}, IS ={a*exp(fpar19)} m={0.3} RS={dRdi/100} N={fpar21} )
G_Rdio dio2 dd VALUE={V(dio2,dd)/(dRdi*((limit(V(Tj),-200,999)+fpar41)/fpar42)**fpar22)}
V_sense2 dio2 dio 0
R_R_ERd_g d2 d1 10k
R1 g s 1G
Rd01 d s 500Meg
Rd02 d2 s 500Meg
Rd03 dio s 500Meg
G_G_Ptot_channel 0 Tj VALUE {heat*LIMIT(V(d,s)*I(V_Ichannel),0,100k) }
G_G_Ptot_Epi 0 t1 VALUE {heat*(LIMIT(V(dd,d1)*I(V_Iepi),0,100k)+LIMIT(V(dd,s)*I(V_sense2),0,100k))}
.ENDS
**********************************************************************
**********************************************************************
************************ L0 TECHNOLOGY MODEL *************************
**********************************************************************
.SUBCKT cool_tech0a d1 g2 s2 PARAMS: a=1
.PARAM MOS_KP_A={4.05}
.PARAM MOS_VTO={3.6}
.PARAM MOS_THETA={0.2}
.PARAM MOS_ETA={0.0+0.00}
.PARAM MOS_RdA={1.85}
.PARAM MOS_TC_RD={22m}
.PARAM MOSR_KPR_A={2.0}
.PARAM MOSR_VTOR={-1*1.0}
.PARAM MOSR_LAMBDAR={0.15*1.4}
.PARAM Dbt_BV={950}
.PARAM Dbt_M={0.9*1.0}
.PARAM Dbt_CJ0_A={0.3n}
.PARAM Dbt_VJ={0.5*1.0}
.PARAM DBODY_IS_A={200p}
.PARAM DBODY_N={1.5}
.PARAM DBODY_RRS={5u*1}
.PARAM DBODY_EG={1.12*1}
.PARAM DBODY_TT=250n
.PARAM DBODY_RSA={250m}
.PARAM DBODY_RS_TC={0.70m}
.PARAM DGD_M={0.55*1.0}
.PARAM DGD_VJ={0.5*1.0}
.PARAM CAP_Cox_Aa={0.030n}
.PARAM CAP_Cgs_Aa={0.18n}
.PARAM CAP_Cds1_Aa={0.9p}
.PARAM MOS_KP={MOS_KP_A*a}
.PARAM MOS_Rd={MOS_RdA/a}
.PARAM MOSR_KPR={MOSR_KPR_A*a}
.PARAM Dbt_CJ0={Dbt_CJ0_A*a}
.PARAM DBODY_IS={DBODY_IS_A*a}
.PARAM DBODY_RS={DBODY_RSA/a}
.PARAM CAP_Cox_a={CAP_Cox_Aa*a}
.PARAM CAP_Cgs_a={CAP_Cgs_Aa*a}
.PARAM CAP_Cds1_a={CAP_Cds1_Aa*a}
M1 d2 g2 s2 s2 DMOS L=1u W=1u
.MODEL DMOS NMOS ( KP= {MOS_KP} VTO={MOS_VTO} THETA={MOS_THETA} VMAX=1.5e5 ETA={MOS_ETA} LEVEL=3)
Rd d2 d1a {MOS_Rd} TC1={MOS_TC_RD}
.MODEL MVDR NMOS (KP={MOSR_KPR} VTO={MOSR_VTOR} LAMBDA={MOSR_LAMBDAR})
Mr d1 d2a d1a d1a MVDR W=1u L=1u
Rx d2a d1a 1m
Cds1 s2 d2 {CAP_Cds1_a}
Dbd s2 d2 Dbt
.MODEL Dbt D(BV={Dbt_BV} M={Dbt_M} CJO={Dbt_CJ0} VJ={Dbt_VJ})
Dbody s2 21 DBODY
.MODEL DBODY D(IS={DBODY_IS} N={DBODY_N} RS={DBODY_RRS} EG={DBODY_EG} TT={DBODY_TT})
Rdiode d1 21 {DBODY_RS} TC1={DBODY_RS_TC}
.MODEL sw NMOS(VTO=0 KP=10 LEVEL=1)
Maux g2 c a a sw
Maux2 b d g2 g2 sw
Eaux c a d2 g2 1
Eaux2 d g2 d2 g2 -1
Cox b d2 {10*CAP_Cox_a}
.MODEL DGD D(M={DGD_M} CJO={CAP_Cox_a} VJ={DGD_VJ})
Rpar b d2 1Meg
Dgd a d2 DGD
Rpar2 d2 a 10Meg
Cgs g2 s2 {CAP_Cgs_a}
.ENDS cool_tech0a
**********************************************************************
.SUBCKT IPW95R060PFD7_L0 drain gate source
.PARAM act=57.03
X1 dd g s cool_tech0a PARAMS: a={act}
Lg gate g1 8.32E-09
Ld drain dd 1.88E-09
Ls source s1 2.82E-09
Rs s1 s 3.42E-04
Rg g1 g 0.5
.ENDS IPW95R060PFD7_L0
********************************************************************************
.SUBCKT IPW95R060PFD7_L1 drain gate source PARAMS: dVth=0 dRdson=0
.PARAM Rs=3.42E-04 Rg=0.5 Rdp=7.44E-05 Ls=2.82E-09 Ld=1.88E-09
.PARAM Lg=8.32E-09 act=57.03 Inn={1.0*57.03} Unn=10.0 Rmax=60.0m
X1 dd g s Tj Tj cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS
********************************************************************************
.SUBCKT IPW95R060PFD7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=3.42E-04 Rg=0.5 Rdp=7.44E-05 Ls=2.82E-09 Ld=1.88E-09
.PARAM Lg=8.32E-09 act=57.03 Inn={1.0*57.03} Unn=10.0 Rmax=60.0m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 548.626u
C_Czth2 0 1 5.615m
C_Czth3 0 2 4.999m
C_Czth4 0 3 26.628m
C_Czth5 0 4 145.15m
C_Czth6 0 Tcase 500.0m
C_Czth7 0 6 1.9
C_Czth8 0 7 2.0
R_Rth1 Tj 1 {4.14m+lzth*1.07m}
R_Rth2 1 2 {5.89m+lzth*1.53m}
R_Rth3 2 3 {22.26m+lzth*5.77m}
R_Rth4 3 4 {42.61m+lzth*66.98m}
R_Rth5 4 Tcase {63.3m+lzth*66.44m}
R_Rth6 Tcase 6 200.0m
R_Rth7 6 7 6.3
.ENDS
********************************************************************************
.SUBCKT IPW95R130PFD7_L0 drain gate source
.PARAM act=25.05
X1 dd g s cool_tech0a PARAMS: a={act}
Lg gate g1 8.38E-09
Ld drain dd 1.94E-09
Ls source s1 3.12E-09
Rs s1 s 4.38E-04
Rg g1 g 0.9
.ENDS IPW95R130PFD7_L0
********************************************************************************
.SUBCKT IPW95R130PFD7_L1 drain gate source PARAMS: dVth=0 dRdson=0
.PARAM Rs=4.38E-04 Rg=0.9 Rdp=7.44E-05 Ls=3.12E-09 Ld=1.94E-09
.PARAM Lg=8.38E-09 act=25.05 Inn={1.0*25.05} Unn=10.0 Rmax=130.0m
X1 dd g s Tj Tj cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS
********************************************************************************
.SUBCKT IPW95R130PFD7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=4.38E-04 Rg=0.9 Rdp=7.44E-05 Ls=3.12E-09 Ld=1.94E-09
.PARAM Lg=8.38E-09 act=25.05 Inn={1.0*25.05} Unn=10.0 Rmax=130.0m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 240.98u
C_Czth2 0 1 2.466m
C_Czth3 0 2 2.196m
C_Czth4 0 3 11.696m
C_Czth5 0 4 63.756m
C_Czth6 0 Tcase 500.0m
C_Czth7 0 6 1.9
C_Czth8 0 7 2.0
R_Rth1 Tj 1 {9.43m+lzth*2.45m}
R_Rth2 1 2 {13.41m+lzth*3.48m}
R_Rth3 2 3 {50.68m+lzth*13.14m}
R_Rth4 3 4 {86.45m+lzth*121.96m}
R_Rth5 4 Tcase {128.27m+lzth*120.74m}
R_Rth6 Tcase 6 200.0m
R_Rth7 6 7 6.3
.ENDS
********************************************************************************
.SUBCKT IPA95R130PFD7_L0 drain gate source
.PARAM act=25.05
X1 dd g s cool_tech0a PARAMS: a={act}
Lg gate g1 6.17E-09
Ld drain dd 1.86E-09
Ls source s1 2.08E-09
Rs s1 s 3.83E-04
Rg g1 g 0.9
.ENDS IPA95R130PFD7_L0
********************************************************************************
.SUBCKT IPA95R130PFD7_L1 drain gate source PARAMS: dVth=0 dRdson=0
.PARAM Rs=3.83E-04 Rg=0.9 Rdp=2.36E-04 Ls=2.08E-09 Ld=1.86E-09
.PARAM Lg=6.17E-09 act=25.05 Inn={1.0*25.05} Unn=10.0 Rmax=130.0m
X1 dd g s Tj Tj cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS
********************************************************************************
.SUBCKT IPA95R130PFD7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=3.83E-04 Rg=0.9 Rdp=2.36E-04 Ls=2.08E-09 Ld=1.86E-09
.PARAM Lg=6.17E-09 act=25.05 Inn={1.0*25.05} Unn=10.0 Rmax=130.0m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 240.98u
C_Czth2 0 1 2.466m
C_Czth3 0 2 2.196m
C_Czth4 0 3 11.696m
C_Czth5 0 4 36.599m
C_Czth6 0 5 18.0m
C_Czth7 0 6 500.0m
C_Czth8 0 7 600.0m
R_Rth1 Tj 1 {9.43m+lzth*2.45m}
R_Rth2 1 2 {13.41m+lzth*3.48m}
R_Rth3 2 3 {50.68m+lzth*13.14m}
R_Rth4 3 4 {86.45m+lzth*55.77m}
R_Rth5 4 5 {85.51m+lzth*54.55m}
R_Rth6 5 6 400.0m
R_Rth7 6 7 5.0
R_Rth8 5 Tcase {2.1+lzth*1.33}
.ENDS
********************************************************************************
.SUBCKT IPB95R130PFD7_L0 drain gate source
.PARAM act=25.05
X1 dd g s cool_tech0a PARAMS: a={act}
Lg gate g1 6.34E-09
Ld drain dd 2.34E-09
Ls source s1 2.55E-09
Rs s1 s 4.50E-04
Rg g1 g 0.9
.ENDS IPB95R130PFD7_L0
********************************************************************************
.SUBCKT IPB95R130PFD7_L1 drain gate source PARAMS: dVth=0 dRdson=0
.PARAM Rs=4.50E-04 Rg=0.9 Rdp=3.76E-04 Ls=2.55E-09 Ld=2.34E-09
.PARAM Lg=6.34E-09 act=25.05 Inn={1.0*25.05} Unn=10.0 Rmax=130.0m
X1 dd g s Tj Tj cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS
********************************************************************************
.SUBCKT IPB95R130PFD7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=4.50E-04 Rg=0.9 Rdp=3.76E-04 Ls=2.55E-09 Ld=2.34E-09
.PARAM Lg=6.34E-09 act=25.05 Inn={1.0*25.05} Unn=10.0 Rmax=130.0m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 240.98u
C_Czth2 0 1 2.466m
C_Czth3 0 2 2.196m
C_Czth4 0 3 11.696m
C_Czth5 0 4 30.499m
C_Czth6 0 Tcase 140.0m
C_Czth7 0 6 220.0m
C_Czth8 0 7 500.0m
R_Rth1 Tj 1 {9.43m+lzth*2.45m}
R_Rth2 1 2 {13.41m+lzth*3.48m}
R_Rth3 2 3 {50.68m+lzth*13.14m}
R_Rth4 3 4 {86.45m+lzth*143.34m}
R_Rth5 4 Tcase {85.51m+lzth*142.12m}
R_Rth6 Tcase 6 400.0m
R_Rth7 6 7 30.0
.ENDS
********************************************************************************
.SUBCKT IPW95R310PFD7_L0 drain gate source
.PARAM act=10.39
X1 dd g s cool_tech0a PARAMS: a={act}
Lg gate g1 8.96E-09
Ld drain dd 2.38E-09
Ls source s1 4.36E-09
Rs s1 s 1.16E-03
Rg g1 g 1
.ENDS IPW95R310PFD7_L0
********************************************************************************
.SUBCKT IPW95R310PFD7_L1 drain gate source PARAMS: dVth=0 dRdson=0
.PARAM Rs=1.16E-03 Rg=1 Rdp=7.67E-05 Ls=4.36E-09 Ld=2.38E-09
.PARAM Lg=8.96E-09 act=10.39 Inn={1.0*10.39} Unn=10.0 Rmax=310.0m
X1 dd g s Tj Tj cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS
********************************************************************************
.SUBCKT IPW95R310PFD7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=1.16E-03 Rg=1 Rdp=7.67E-05 Ls=4.36E-09 Ld=2.38E-09
.PARAM Lg=8.96E-09 act=10.39 Inn={1.0*10.39} Unn=10.0 Rmax=310.0m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 99.951u
C_Czth2 0 1 1.023m
C_Czth3 0 2 910.819u
C_Czth4 0 3 4.851m
C_Czth5 0 4 26.444m
C_Czth6 0 Tcase 500.0m
C_Czth7 0 6 1.9
C_Czth8 0 7 2.0
R_Rth1 Tj 1 {22.74m+lzth*5.9m}
R_Rth2 1 2 {32.33m+lzth*8.38m}
R_Rth3 2 3 {122.19m+lzth*31.68m}
R_Rth4 3 4 {181.57m+lzth*164.59m}
R_Rth5 4 Tcase {268.97m+lzth*161.64m}
R_Rth6 Tcase 6 200.0m
R_Rth7 6 7 6.3
.ENDS
********************************************************************************
.SUBCKT IPA95R310PFD7_L0 drain gate source
.PARAM act=10.39
X1 dd g s cool_tech0a PARAMS: a={act}
Lg gate g1 6.17E-09
Ld drain dd 2.02E-09
Ls source s1 2.92E-09
Rs s1 s 9.06E-04
Rg g1 g 1
.ENDS IPA95R310PFD7_L0
********************************************************************************
.SUBCKT IPA95R310PFD7_L1 drain gate source PARAMS: dVth=0 dRdson=0
.PARAM Rs=9.06E-04 Rg=1 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-09
.PARAM Lg=6.17E-09 act=10.39 Inn={1.0*10.39} Unn=10.0 Rmax=310.0m
X1 dd g s Tj Tj cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS
********************************************************************************
.SUBCKT IPA95R310PFD7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.06E-04 Rg=1 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-09
.PARAM Lg=6.17E-09 act=10.39 Inn={1.0*10.39} Unn=10.0 Rmax=310.0m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 99.951u
C_Czth2 0 1 1.023m
C_Czth3 0 2 910.819u
C_Czth4 0 3 4.851m
C_Czth5 0 4 14.207m
C_Czth6 0 5 18.0m
C_Czth7 0 6 500.0m
C_Czth8 0 7 600.0m
R_Rth1 Tj 1 {22.74m+lzth*5.9m}
R_Rth2 1 2 {32.33m+lzth*8.38m}
R_Rth3 2 3 {122.19m+lzth*31.68m}
R_Rth4 3 4 {181.57m+lzth*99.74m}
R_Rth5 4 5 {179.32m+lzth*96.79m}
R_Rth6 5 6 400.0m
R_Rth7 6 7 5.0
R_Rth8 5 Tcase {2.1+lzth*1.12}
.ENDS
********************************************************************************
.SUBCKT IPB95R310PFD7_L0 drain gate source
.PARAM act=10.39
X1 dd g s cool_tech0a PARAMS: a={act}
Lg gate g1 6.35E-09
Ld drain dd 2.47E-09
Ls source s1 3.50E-09
Rs s1 s 9.95E-04
Rg g1 g 1
.ENDS IPB95R310PFD7_L0
********************************************************************************
.SUBCKT IPB95R310PFD7_L1 drain gate source PARAMS: dVth=0 dRdson=0
.PARAM Rs=9.95E-04 Rg=1 Rdp=3.76E-04 Ls=3.50E-09 Ld=2.47E-09
.PARAM Lg=6.35E-09 act=10.39 Inn={1.0*10.39} Unn=10.0 Rmax=310.0m
X1 dd g s Tj Tj cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS
********************************************************************************
.SUBCKT IPB95R310PFD7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.95E-04 Rg=1 Rdp=3.76E-04 Ls=3.50E-09 Ld=2.47E-09
.PARAM Lg=6.35E-09 act=10.39 Inn={1.0*10.39} Unn=10.0 Rmax=310.0m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 99.951u
C_Czth2 0 1 1.023m
C_Czth3 0 2 910.819u
C_Czth4 0 3 4.851m
C_Czth5 0 4 11.839m
C_Czth6 0 Tcase 140.0m
C_Czth7 0 6 220.0m
C_Czth8 0 7 500.0m
R_Rth1 Tj 1 {22.74m+lzth*5.9m}
R_Rth2 1 2 {32.33m+lzth*8.38m}
R_Rth3 2 3 {122.19m+lzth*31.68m}
R_Rth4 3 4 {181.57m+lzth*209.42m}
R_Rth5 4 Tcase {179.32m+lzth*206.47m}
R_Rth6 Tcase 6 400.0m
R_Rth7 6 7 30.0
.ENDS
********************************************************************************
.SUBCKT IPA95R450PFD7_L0 drain gate source
.PARAM act=7.16
X1 dd g s cool_tech0a PARAMS: a={act}
Lg gate g1 6.17E-09
Ld drain dd 2.02E-09
Ls source s1 2.92E-09
Rs s1 s 9.06E-04
Rg g1 g 1
.ENDS IPA95R450PFD7_L0
********************************************************************************
.SUBCKT IPA95R450PFD7_L1 drain gate source PARAMS: dVth=0 dRdson=0
.PARAM Rs=9.06E-04 Rg=1 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-09
.PARAM Lg=6.17E-09 act=7.16 Inn={1.0*7.16} Unn=10.0 Rmax=450.0m
X1 dd g s Tj Tj cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS
********************************************************************************
.SUBCKT IPA95R450PFD7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=9.06E-04 Rg=1 Rdp=2.35E-04 Ls=2.92E-09 Ld=2.02E-09
.PARAM Lg=6.17E-09 act=7.16 Inn={1.0*7.16} Unn=10.0 Rmax=450.0m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 68.879u
C_Czth2 0 1 704.908u
C_Czth3 0 2 627.667u
C_Czth4 0 3 3.343m
C_Czth5 0 4 9.274m
C_Czth6 0 5 18.0m
C_Czth7 0 6 500.0m
C_Czth8 0 7 600.0m
R_Rth1 Tj 1 {33.0m+lzth*8.56m}
R_Rth2 1 2 {46.92m+lzth*12.16m}
R_Rth3 2 3 {177.31m+lzth*45.97m}
R_Rth4 3 4 {242.69m+lzth*115.96m}
R_Rth5 4 5 {239.42m+lzth*111.68m}
R_Rth6 5 6 400.0m
R_Rth7 6 7 5.0
R_Rth8 5 Tcase {2.1+lzth*966.34m}
.ENDS
********************************************************************************
.SUBCKT IPB95R450PFD7_L0 drain gate source
.PARAM act=7.16
X1 dd g s cool_tech0a PARAMS: a={act}
Lg gate g1 6.36E-09
Ld drain dd 2.56E-09
Ls source s1 4.29E-09
Rs s1 s 3.53E-03
Rg g1 g 1
.ENDS IPB95R450PFD7_L0
********************************************************************************
.SUBCKT IPB95R450PFD7_L1 drain gate source PARAMS: dVth=0 dRdson=0
.PARAM Rs=3.53E-03 Rg=1 Rdp=3.76E-04 Ls=4.29E-09 Ld=2.56E-09
.PARAM Lg=6.36E-09 act=7.16 Inn={1.0*7.16} Unn=10.0 Rmax=450.0m
X1 dd g s Tj Tj cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS
********************************************************************************
.SUBCKT IPB95R450PFD7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=3.53E-03 Rg=1 Rdp=3.76E-04 Ls=4.29E-09 Ld=2.56E-09
.PARAM Lg=6.36E-09 act=7.16 Inn={1.0*7.16} Unn=10.0 Rmax=450.0m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 68.879u
C_Czth2 0 1 704.908u
C_Czth3 0 2 627.667u
C_Czth4 0 3 3.343m
C_Czth5 0 4 7.728m
C_Czth6 0 Tcase 140.0m
C_Czth7 0 6 220.0m
C_Czth8 0 7 500.0m
R_Rth1 Tj 1 {33.0m+lzth*8.56m}
R_Rth2 1 2 {46.92m+lzth*12.16m}
R_Rth3 2 3 {177.31m+lzth*45.97m}
R_Rth4 3 4 {242.69m+lzth*199.13m}
R_Rth5 4 Tcase {239.42m+lzth*194.85m}
R_Rth6 Tcase 6 400.0m
R_Rth7 6 7 30.0
.ENDS
********************************************************************************
.SUBCKT IPD95R450PFD7_L0 drain gate source
.PARAM act=7.16
X1 dd g s cool_tech0a PARAMS: a={act}
Lg gate g1 4.06E-09
Ld drain dd 8.24E-11
Ls source s1 3.34E-09
Rs s1 s 2.31E-03
Rg g1 g 1
.ENDS IPD95R450PFD7_L0
********************************************************************************
.SUBCKT IPD95R450PFD7_L1 drain gate source PARAMS: dVth=0 dRdson=0
.PARAM Rs=2.31E-03 Rg=1 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-11
.PARAM Lg=4.06E-09 act=7.16 Inn={1.0*7.16} Unn=10.0 Rmax=450.0m
X1 dd g s Tj Tj cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
E1 Tj w VALUE={TEMP}
R1 w 0 1u
.ENDS
********************************************************************************
.SUBCKT IPD95R450PFD7_L3 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 Zthtype=0
.PARAM Rs=2.31E-03 Rg=1 Rdp=2.38E-06 Ls=3.34E-09 Ld=8.24E-11
.PARAM Lg=4.06E-09 act=7.16 Inn={1.0*7.16} Unn=10.0 Rmax=450.0m
.PARAM lzth={limit(Zthtype,0,1)}
X1 dd g s Tj 1 cool_tech PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn}
+Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1
L_Ld drain ldrd {Ld}
R_Ld drain ldrd 10
R_Rd dd ldrd {Rdp}
L_Ls source lsrs {Ls}
R_Ls source lsrs 10
R_Rs s lsrs {Rs}
L_Lg gate lgrg {Lg}
R_Lg gate lgrg 10
R_Rg lgrg g {Rg}
C_Czth1 Tj 0 68.879u
C_Czth2 0 1 704.908u
C_Czth3 0 2 627.667u
C_Czth4 0 3 3.343m
C_Czth5 0 4 4.726m
C_Czth6 0 Tcase 42.5m
C_Czth7 0 6 65.0m
C_Czth8 0 7 90.0m
R_Rth1 Tj 1 {33.0m+lzth*8.56m}
R_Rth2 1 2 {46.92m+lzth*12.16m}
R_Rth3 2 3 {177.31m+lzth*45.97m}
R_Rth4 3 4 {242.69m+lzth*231.24m}
R_Rth5 4 Tcase {175.21m+lzth*226.95m}
R_Rth6 Tcase 6 500.0m
R_Rth7 6 7 50.0
.ENDS
********************************************************************************

31
Komponentenauslegung/FETs/Switching_Losses.m Normal file
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%%%% Loss Table Calculation %%%%
clear all
close all
%%
V_in = [350, 400, 500, 600]; %Drain-SOurce Voltage [V]
I_D = [1, 2, 3, 4, 5]; %Drain Current [A]
Qg = 62e-9; %Q_GS + Q_GD [C]
I_g = 1.61; %Average Gate current [A]
T_sw = Qg/I_g; %Switching time [s]
E_sw = 1/2 * V_in' * I_D * T_sw; %Switching losses [W]
figure
colormap("parula")
surf(V_in, I_D, E_sw'*1e6)
xlabel("V_{DS}in V")
ylabel("I_D in A")
zlabel("E_{sw} in \mu J")
title("Switching Losses")
grid minor
E_copy = E_sw*1e6;
data = readtable("Diode_forward.csv");
figure
plot(data.x, data.y)
grid minor
xlabel("V_F in V")
ylabel("I_D in A")
title("Forwrd Characteristics Diode")

67
Komponentenauslegung/FETs/Thermal_models/IPA95R130PFD7 Diode.xml Normal file
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Komponentenauslegung/FETs/Thermal_models/IPA95R130PFD7.xml Normal file
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Komponentenauslegung/FETs/Thermal_models/SiHB21N80AE.xml Normal file
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<?xml version="1.0" encoding="UTF-8"?>
<SemiconductorLibrary xmlns="http://www.plexim.com/xml/semiconductors/" version="1.1">
<Package class="MOSFET with Diode" vendor="Vishay" partnumber="SiHB21N80AE">
<Variables/>
<SemiconductorData type="MOSFET with Diode">
<TurnOnLoss>
<ComputationMethod>Table only</ComputationMethod>
<CurrentAxis> -1 0 1 2 3 4 5</CurrentAxis>
<VoltageAxis> 0 350 400 500 600</VoltageAxis>
<TemperatureAxis> 25</TemperatureAxis>
<Energy scale="1e-06">
<Temperature>
<Voltage> 0 0 0 0 0 0 0</Voltage>
<Voltage> 0 0 13.6 27.1 40.7 54.25 67.8</Voltage>
<Voltage> 0 0 15.5 31 46.5 62 77.5</Voltage>
<Voltage> 0 0 19.38 38.8 58.1 77.5 96.9</Voltage>
<Voltage> 0 0 23.25 46.5 69.75 93 116.25</Voltage>
</Temperature>
</Energy>
</TurnOnLoss>
<TurnOffLoss>
<ComputationMethod>Table only</ComputationMethod>
<CurrentAxis> -1 0 1 2 3 4 5</CurrentAxis>
<VoltageAxis> 0 350 400 500 600</VoltageAxis>
<TemperatureAxis> 25</TemperatureAxis>
<Energy scale="1e-06">
<Temperature>
<Voltage> 0 0 0 0 0 0 0</Voltage>
<Voltage> 0 0 13.6 27.1 40.7 54.25 67.8</Voltage>
<Voltage> 0 0 15.5 31 46.5 62 77.5</Voltage>
<Voltage> 0 0 19.38 38.8 58.1 77.5 96.9</Voltage>
<Voltage> 0 0 23.25 46.5 69.75 93 116.3</Voltage>
</Temperature>
</Energy>
</TurnOffLoss>
<ConductionLoss>
<ComputationMethod>Table only</ComputationMethod>
<CurrentAxis> 0 5</CurrentAxis>
<TemperatureAxis> 25</TemperatureAxis>
<VoltageDrop scale="1">
<Temperature> 0 1.025</Temperature>
</VoltageDrop>
</ConductionLoss>
</SemiconductorData>
<ThermalModel>
<Branch type="Cauer">
<RCElement R="0.513" C="0.0037623"/>
<RCElement R="1.8087e-06" C="0.000833"/>
<RCElement R="0.0291832" C="0.0071784"/>
<RCElement R="0.15898" C="0.00097147"/>
</Branch>
</ThermalModel>
<Comment>
<Line>Simple Model for SiHB21N80AE</Line>
</Comment>
</Package>
</SemiconductorLibrary>

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Komponentenauslegung/FETs/Thermal_models/VB60170G-E3.xml Normal file
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Komponentenauslegung/FETs/Thermal_models/VX60170PW.xml Normal file
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4
Komponentenauslegung/FETs/data.csv Normal file
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6.7391 13.4783 20.2174 26.9565 33.6957
7.7019 15.4037 23.1056 30.8075 38.5093
9.6273 19.2547 28.8820 38.5093 48.1366
11.5528 23.1056 34.6584 46.2112 57.7640
1 6.7391 13.4783 20.2174 26.9565 33.6957
2 7.7019 15.4037 23.1056 30.8075 38.5093
3 9.6273 19.2547 28.8820 38.5093 48.1366
4 11.5528 23.1056 34.6584 46.2112 57.7640