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ae54db62e0
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8a82ad4cee |
@ -1,18 +1,20 @@
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#include <math.h>
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#include <stdint.h>
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#define NTC_A1 0.003354016f // see NTC RT csv from Vishay
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#define NTC_B1 0.000300131f
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#define NTC_C1 5.08516E-06f
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#define NTC_D1 2.18765E-07f
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#define VREF 3000.0
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#define VREF 3000.0f
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// More efficient (?) calc using:
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// R_T = R_Pullup / (V_REF / ADC - 1)
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// With R_T/R_0 and R_0 = R_T@25C
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// R_T/R_0 = 1 / V_REF / ADC - 1
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[[gnu::optimize("fast-math")]]
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static inline int ntc_mv_to_celsius(int16_t adc) {
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float log_ohms = logf(1/((VREF/adc)-1));
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float log_ohms = logf(1 / ((VREF / adc) - 1));
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return 1.0f / (NTC_A1 + NTC_B1 * log_ohms + NTC_C1 * log_ohms * log_ohms + NTC_D1 * log_ohms * log_ohms * log_ohms) - 273.15f;
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}
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@ -4,7 +4,7 @@
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#include "main.h"
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#define N_BMS 1
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#define ADBMS_SPI_TIMEOUT 100 // Timeout in ms
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#define ADBMS_MAX_CHIP_TEMP 110 // max temperature of ADBMS6830B (not battery) in C
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[[maybe_unused]] static inline void mcuAdbmsCSLow() {
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HAL_GPIO_WritePin(AMS_CS_GPIO_Port, AMS_CS_Pin, GPIO_PIN_RESET);
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@ -81,7 +81,7 @@ typedef struct {
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int16_t auxVoltages[MAXIMUM_AUX_VOLTAGES];
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struct ADBMS6830_Internal_Status status;
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uint16_t internalDieTemp;
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int16_t internalDieTemp;
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uint16_t analogSupplyVoltage;
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uint16_t digitalSupplyVoltage;
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uint16_t sumOfCellMeasurements;
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@ -106,8 +106,7 @@ ADBMS_DetailedStatus AMS_Idle_Loop() {
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return (ADBMS_DetailedStatus){ADBMS_UNDERVOLT, match - 1};
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}
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// TODO: replace with the correct threshold for the internal die temperature
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if ((match = any(module.internalDieTemp > 28000 || module.status.THSD))) {
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if ((match = any(module.internalDieTemp > ADBMS_MAX_CHIP_TEMP || module.status.THSD))) {
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return (ADBMS_DetailedStatus){ADBMS_INTERNAL_BMS_OVERTEMP, match - 1};
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}
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