diff --git a/AMS_Master_Code/Core/Inc/config_ADBMS6830.h b/AMS_Master_Code/Core/Inc/config_ADBMS6830.h
index 4b60e4c..dedb364 100644
--- a/AMS_Master_Code/Core/Inc/config_ADBMS6830.h
+++ b/AMS_Master_Code/Core/Inc/config_ADBMS6830.h
@@ -4,7 +4,7 @@
 #include "main.h"
 
 #define N_BMS 1
-#define ADBMS_SPI_TIMEOUT 100 // Timeout in ms
+#define ADBMS_MAX_CHIP_TEMP 110 // max temperature of ADBMS6830B (not battery) in C
 
 [[maybe_unused]] static inline void mcuAdbmsCSLow() {
     HAL_GPIO_WritePin(AMS_CS_GPIO_Port, AMS_CS_Pin, GPIO_PIN_RESET);
diff --git a/AMS_Master_Code/Core/Lib/ADBMS6830B_Driver/Core/Inc/ADBMS_Driver.h b/AMS_Master_Code/Core/Lib/ADBMS6830B_Driver/Core/Inc/ADBMS_Driver.h
index d3cdd65..c3b958d 100644
--- a/AMS_Master_Code/Core/Lib/ADBMS6830B_Driver/Core/Inc/ADBMS_Driver.h
+++ b/AMS_Master_Code/Core/Lib/ADBMS6830B_Driver/Core/Inc/ADBMS_Driver.h
@@ -81,7 +81,7 @@ typedef struct {
     int16_t auxVoltages[MAXIMUM_AUX_VOLTAGES];
 
     struct ADBMS6830_Internal_Status status;
-    uint16_t internalDieTemp;
+    int16_t internalDieTemp;
     uint16_t analogSupplyVoltage;
     uint16_t digitalSupplyVoltage;
     uint16_t sumOfCellMeasurements;
diff --git a/AMS_Master_Code/Core/Lib/ADBMS6830B_Driver/Core/Src/ADBMS_HighLevel.c b/AMS_Master_Code/Core/Lib/ADBMS6830B_Driver/Core/Src/ADBMS_HighLevel.c
index e30a1ed..6fb50f7 100644
--- a/AMS_Master_Code/Core/Lib/ADBMS6830B_Driver/Core/Src/ADBMS_HighLevel.c
+++ b/AMS_Master_Code/Core/Lib/ADBMS6830B_Driver/Core/Src/ADBMS_HighLevel.c
@@ -106,8 +106,7 @@ ADBMS_DetailedStatus AMS_Idle_Loop() {
         return (ADBMS_DetailedStatus){ADBMS_UNDERVOLT, match - 1};
     }
 
-    // TODO: replace with the correct threshold for the internal die temperature
-    if ((match = any(module.internalDieTemp > 28000 || module.status.THSD))) { 
+    if ((match = any(module.internalDieTemp > ADBMS_MAX_CHIP_TEMP || module.status.THSD))) { 
         return (ADBMS_DetailedStatus){ADBMS_INTERNAL_BMS_OVERTEMP, match - 1};
     }