(module "TO544P516X1586X2557-3P" (layer F.Cu)
  (descr "pg-to-247")
  (tags "MOSFET (N-Channel)")
  (fp_text reference Q** (at 0 0) (layer F.SilkS)
    (effects (font (size 1.27 1.27) (thickness 0.254)))
  )
  (fp_text user %R (at 0 0) (layer F.Fab)
    (effects (font (size 1.27 1.27) (thickness 0.254)))
  )
  (fp_text value "TO544P516X1586X2557-3P" (at 0 0) (layer F.SilkS) hide
    (effects (font (size 1.27 1.27) (thickness 0.254)))
  )
  (fp_line (start -2.825 -3.12) (end 13.705 -3.12) (layer F.CrtYd) (width 0.05))
  (fp_line (start 13.705 -3.12) (end 13.705 2.54) (layer F.CrtYd) (width 0.05))
  (fp_line (start 13.705 2.54) (end -2.825 2.54) (layer F.CrtYd) (width 0.05))
  (fp_line (start -2.825 2.54) (end -2.825 -3.12) (layer F.CrtYd) (width 0.05))
  (fp_line (start -2.575 -2.87) (end 13.455 -2.87) (layer F.Fab) (width 0.1))
  (fp_line (start 13.455 -2.87) (end 13.455 2.29) (layer F.Fab) (width 0.1))
  (fp_line (start 13.455 2.29) (end -2.575 2.29) (layer F.Fab) (width 0.1))
  (fp_line (start -2.575 2.29) (end -2.575 -2.87) (layer F.Fab) (width 0.1))
  (fp_line (start -2.575 -0.15) (end 0.145 -2.87) (layer F.Fab) (width 0.1))
  (fp_line (start 13.455 2.29) (end 13.455 -2.87) (layer F.SilkS) (width 0.2))
  (fp_line (start 13.455 -2.87) (end -2.575 -2.87) (layer F.SilkS) (width 0.2))
  (fp_line (start -2.575 -2.87) (end -2.575 0) (layer F.SilkS) (width 0.2))
  (pad 1 thru_hole rect (at 0 0) (size 2.535 2.535) (drill 1.69) (layers *.Cu *.Mask))
  (pad 2 thru_hole circle (at 5.44 0) (size 2.535 2.535) (drill 1.69) (layers *.Cu *.Mask))
  (pad 3 thru_hole circle (at 10.88 0) (size 2.535 2.535) (drill 1.69) (layers *.Cu *.Mask))
  (model IPW60R045CPA.stp
    (at (xyz 0 0 0))
    (scale (xyz 1 1 1))
    (rotate (xyz 0 0 0))
  )
)